features xbright led technology larger power chip design high performance 90 mw min. (460 & 470 nm) blue 60 mw min. (505 nm) traffc green 40 mw min. (527 nm) green single wire bond structure ausn backside metalization ? ? ? C C C ? ? applications general illumination automobile aircraft decorative lighting task lighting outdoor illumination white leds backlighting traffc signals ? C C C C C ? ? ? xbright ? power chip led c xxx xb900-s x 000-a crees xb? power chip series of leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary g?sic ? substrate to deliver superior price/performance for high-intensity leds. these led chips have a geometrically enhanced epi-down design to maximize light extraction effciency and require only a single wire bond connection. these leds are useful in a broad range of applications such as outdoor full-motion led video signs, automotive lighting and white leds. crees xb power chips are compatible with optical power packages that employ proper thermal management. d a t a s h e e t : c p r 3 c m , r e v . d c xxx xb900-s x 000-a chip diagram top view bottom view g?sic led chip 900 x 900 m width = 30 m sic substrate 764 m contact metal h = 250 m bond pad 120 m diameter die cross section cathode (-) ingan anode (+) subject to change without notice. www.cree.com
copyright ? 2005-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and xbright are registered trademarks, and xb is a trademark of cree, inc. cpr3cm rev. d cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 5c note c xxx xb900-s x 000-a dc forward current 500 ma note 2 peak forward current (1/10 duty cycle @ 1khz) 700 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +85c storage temperature range -40c to +100c typical electrical/optical characteristics at t a = 5c, if = 350ma note part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c460xb900-s9000-a 3.0 3.4 3.9 10 21 C470XB900-S9000-A 3.0 3.4 3.9 10 22 c505xb900-s6000-a 3.0 3.4 3.9 10 30 c527xb900-s4000-a 3.0 3.4 3.9 10 35 mechanical specifcations c xxx xb900-s x 000-a description dimension tolerance p-n junction area (m) 848 x 848 25 top area (m) 725 x 725 25 bottom area (m) 900 x 900 50 chip thickness (m) 250 25 top au bond pad diameter (m) 120 10 au bond pad thickness (m) 1.2 0.5 back contact metal area (m) 764 x 764 25 back contact metal thickness (m) 1.7 0.3 notes: maximum ratings are package dependent. the above ratings were determined using a au-plated to39 header without an encapsulant for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average expected by manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics measured in an integrating sphere using illuminance e. back contact metal is 80%/20% au/sn by weight, with target eutectic melting temperature of approximately 282c. caution: to avoid leakage currents and achieve maximum output effciency, die attach material must not contact the side of the chip. xb900 chips are shipped with the junction side up, requiring die transfer prior to die attach. specifcations are subject to change without notice. 1. 2. 3. 4. 5. 6.
copyright ? 2005-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and xbright are registered trademarks, and xb is a trademark of cree, inc. 3 cpr3cm rev. d cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx xb900-s x 000-a led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx xb900-s x 000-a) orders may be flled with any or all bins (c xxx xb290-02 xx -a) contained in the kit. all radiant fux and all dominant wavelength values shown and specifed are at if = 350 ma. radiant fux values are measured using au-plated to39 headers without an encapsulant. c460xb900-s9000-a c460xb900-0213-a c460xb900-0214-a c460xb900-0215-a c460xb900-0216-a c460xb900-0209-a c460xb900-0210-a c460xb900-0211-a c460xb900-0212-a c460xb900-0205-a c460xb900-0206-a c460xb900-0207-a c460xb900-0208-a c460xb900-0201-a c460xb900-0202-a c460xb900-0203-a c460xb900-0204-a 455 nm 457.5 nm 460 nm 462.5 nm 465 nm 165 mw 140 mw 115 mw 90 mw dominant wavelength radiant flux C470XB900-S9000-A c470xb900-0209-a c470xb900-0210-a c470xb900-0211-a c470xb900-0212-a c470xb900-0205-a c470xb900-0206-a c470xb900-0207-a c470xb900-0208-a c470xb900-0201-a c470xb900-0202-a c470xb900-0203-a c470xb900-0204-a 465 nm 467.5 nm 470 nm 472.5 nm 475 nm 140 mw 115 mw 90 mw dominant wavelength radiant flux c57xb900-s4000-a c527xb900-0207-a c527xb900-0208-a c527xb900-0209-a c527xb900-0204-a c527xb900-0205-a c527xb900-0206-a c527xb900-0201-a c527xb900-0202-a c527xb900-0203-a 520 nm 525 nm 530 nm 535 nm 75 mw 55 mw 40 mw dominant wavelength radiant flux c505xb900-s6000-a c505xb900-0203-a c505xb900-0204-a c505xb900-0201-a c505xb900-0202-a 500 nm 505 nm 510 nm 85 mw 60 mw dominant wavelength radiant flux
copyright ? 2005-2006 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, g?sic and xbright are registered trademarks, and xb is a trademark of cree, inc. 4 cpr3cm rev. d cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves, t a = 25?c typical junction temp. curves, if = 350 ma forward current vs forward voltage 0 50 100 150 200 250 300 350 400 0 0.5 1 1.5 2 2.5 3 3.5 4 vf (v) if (ma) relative intensity vs forward current 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 400 if (ma) % dominant wavelength shift vs forward current -2 0 2 4 6 8 10 0 50 100 150 200 250 300 350 400 if (ma) shift (nm) 470nm 527nm relative light intensity 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 0 25 50 75 100 125 junction temperature (c) relative light intensity 470nm wavelength shift 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 25 50 75 100 125 junction temperature (c) wavelength shift (nm) 470nm voltage shift -0.4 -0.3 -0.2 -0.1 0.0 0 25 50 75 100 125 junction temperature (c) voltage shift (v) 470nm
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